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                                       Details for article 56 of 60 found articles
 
 
  The parameter influence of ion irradiation on the distribution profile of the defect in silicon films
 
 
Title: The parameter influence of ion irradiation on the distribution profile of the defect in silicon films
Author: Shemukhin, A.A.
Balaskshin, Yu.V.
Evseev, A.P.
Chernysh, V.S.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 406 (2017) nr. PB pages 507-510
Year: 2017
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 56 of 60 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands