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                                       Details for article 28 of 60 found articles
 
 
  Low energy proton induced single event upset in 65nm DDR and QDR commercial SRAMs
 
 
Title: Low energy proton induced single event upset in 65nm DDR and QDR commercial SRAMs
Author: Ye, B.
Liu, J.
Wang, T.S.
Liu, T.Q.
Maaz, K.
Luo, J.
Wang, B.
Yin, Y.N.
Ji, Q.G.
Sun, Y.M.
Hou, M.D.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 406 (2017) nr. PB pages 443-448
Year: 2017
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 28 of 60 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands