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Low energy proton induced single event upset in 65nm DDR and QDR commercial SRAMs |
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Title: |
Low energy proton induced single event upset in 65nm DDR and QDR commercial SRAMs |
Author: |
Ye, B. Liu, J. Wang, T.S. Liu, T.Q. Maaz, K. Luo, J. Wang, B. Yin, Y.N. Ji, Q.G. Sun, Y.M. Hou, M.D. |
Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paging: |
Volume 406 (2017) nr. PB pages 443-448 |
Year: |
2017 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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