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                                       Details for article 78 of 178 found articles
 
 
  Investigation of defects in weakly damaged ion implanted GaAs layers
 
 
Title: Investigation of defects in weakly damaged ion implanted GaAs layers
Author: Wesch, W.
Jordanov, A.
Gärtner, K.
Götz, G.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 39 (1989) nr. 1-4 pages 4 p.
Year: 1989
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 78 of 178 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands