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Journal description
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Details for article 42 of 55 found articles
| Title: |
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices |
| Author: |
Faye, D. Nd. Fialho, M. Magalhães, S. Alves, E. Ben Sedrine, N. Rodrigues, J. Correia, M.R. Monteiro, T. Boćkowski, M. Hoffmann, V. Weyers, M. Lorenz, K. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 379 (2016) nr. C pages 4 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 42 of 55 found articles
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