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Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam |
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Titel: |
Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam |
Auteur: |
Pastuović, Željko Capan, Ivana Cohen, David D. Forneris, Jacopo Iwamoto, Naoya Ohshima, Takeshi Siegele, Rainer Hoshino, Norihiro Tsuchida, Hidekazu |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 348 (2015) nr. C pagina's 7 p. |
Jaar: |
2015 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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