Characterization of Neutron Transmutation Doped (NTD) Ge for low temperature sensor development
Titel:
Characterization of Neutron Transmutation Doped (NTD) Ge for low temperature sensor development
Auteur:
Mathimalar, S. Singh, V. Dokania, N. Nanal, V. Pillay, R.G. Pal, S. Ramakrishnan, S. Shrivastava, A. Maheshwari, Priya Pujari, P.K. Ojha, S. Kanjilal, D. Jagadeesan, K.C. Thakare, S.V.
Verschenen in:
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms