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                                       Details for article 24 of 61 found articles
 
 
  Dislocation density and tetragonal distortion of a GaN epilayer on Si (111): A comparative RBS/C and TEM study
 
 
Title: Dislocation density and tetragonal distortion of a GaN epilayer on Si (111): A comparative RBS/C and TEM study
Author: Lenka, H.
Meersschaut, J.
Kandaswamy, P.K.
Modarresi, H.
Bender, H.
Vantomme, A.
Vandervorst, W.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 331 (2014) nr. C pages 5 p.
Year: 2014
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 24 of 61 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands