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In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7MeV protons irradiation |
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Titel: |
In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7MeV protons irradiation |
Auteur: |
Gaubas, E. Kovalevskij, V. Kadys, A. Gaspariunas, M. Mickevicius, J. Jasiunas, A. Remeikis, V. Uleckas, A. Tekorius, A. Vaitkus, J. Velicka, A. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 307 (2013) nr. C pagina's 3 p. |
Jaar: |
2013 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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