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Details for article 5 of 33 found articles
| Title: |
Depth profiling of high energy nitrogen ions implanted in the ‹100›, ‹110› and randomly oriented silicon crystals |
| Author: |
Erić, M. Petrović, S. Kokkoris, M. Lagoyannis, A. Paneta, V. Harissopulos, S. Telečki, I. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 274 (2012) nr. C pages 6 p. |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 33 found articles
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