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                                       Details for article 96 of 113 found articles
 
 
  Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers
 
 
Title: Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers
Author: Cayrel, F.
Bazin, A.E.
Lamhamdi, M.
Benchanaa, Y.
Menard, O.
Yvon, A.
Collard, E.
Alquier, D.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 272 (2012) nr. C pages 4 p.
Year: 2012
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 96 of 113 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands