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                                       Details for article 16 of 25 found articles
 
 
  HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions
 
 
Title: HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions
Author: Zhang, L.M.
Zhang, C.H.
Zhang, L.Q.
Jia, X.J.
Han, L.H.
Xu, C.L.
Zhang, Y.
Jin, Y.F.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 269 (2011) nr. 10 pages 4 p.
Year: 2011
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 16 of 25 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands