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Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography |
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Titel: |
Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography |
Auteur: |
Danilewsky, A. Wittge, J. Hess, A. Cröll, A. Allen, D. McNally, P. Vagovič, P. Cecilia, A. Li, Z. Baumbach, T. Gorostegui-Colinas, E. Elizalde, M.R. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 268 (2010) nr. 3-4 pagina's 4 p. |
Jaar: |
2010 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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