|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 12 of 61 found articles
| Title: |
Atomistic simulations of epitaxial recrystallization in 4H-SiC along the [0001] direction |
| Author: |
Gao, F. Zhang, Y. Devanathan, R. Posselt, M. Weber, W.J. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 255 (2007) nr. 1 pages 5 p. |
| Year: |
2007 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 61 found articles
| << previous | next >> |