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Journal description
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Details for article 159 of 213 found articles
| Title: |
Rate enhancement during thermal oxidation of Ge+-implanted silicon |
| Author: |
Hossain, K. Savage, L.K. Holland, O.W. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 241 (2005) nr. 1-4 pages 6 p. |
| Year: |
2005 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 159 of 213 found articles
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