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                                       Details for article 22 of 70 found articles
 
 
  Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon
 
 
Title: Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon
Author: Hernández-Mangas, J.M.
Arias, J.
Marqués, L.A.
Ruiz-Bueno, A.
Bailón, L.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 228 (2005) nr. 1-4 pages 5 p.
Year: 2005
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 70 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands