Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 11 of 27 found articles
 
 
  Defect distribution in ion implanted silicon: comparison between Monte Carlo simulation and triple crystal X-ray measurements
 
 
Title: Defect distribution in ion implanted silicon: comparison between Monte Carlo simulation and triple crystal X-ray measurements
Author: Servidori, M.
Zaumseil, P.
Winter, U.
Cembali, F.
Mazzone, A.M.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 22 (1987) nr. 4 pages 2 p.
Year: 1987
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 27 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands