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                                       Details for article 12 of 17 found articles
 
 
  Mechanisms of void formation in Ge implanted SiO2 films
 
 
Title: Mechanisms of void formation in Ge implanted SiO2 films
Author: Marstein, E.S.
Gunnæs, A.E.
Serincan, U.
Jørgensen, S.
Olsen, A.
Turan, R.
Finstad, T.G.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 207 (2003) nr. 4 pages 10 p.
Year: 2003
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 17 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands