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Details for article 210 of 242 found articles
| Title: |
SiC precipitates formed in Si by simultaneous dual beam implantation of C+ and Si+ ions |
| Author: |
Kögler, R. Eichhorn, F. Mücklich, A. Reuther, H. Heera, V. Skorupa, W. Lindner, J.K.N. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 206 (2003) nr. C pages 5 p. |
| Year: |
2003 |
| Contents: | |
| Publisher: |
Elsevier Science B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 210 of 242 found articles
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