|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 8 of 19 found articles
| Title: |
Fluence dependence of the interband critical points in ion-implanted silicon |
| Author: |
El-Sherbiny, M.A El-Bahnasawy, H.H El-Ocker, M.M |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 168 (2000) nr. 4 pages 11 p. |
| Year: |
2000 |
| Contents: | |
| Publisher: |
Elsevier Science B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 19 found articles
| << previous | next >> |