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                                       Details for article 28 of 29 found articles
 
 
  The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs
 
 
Title: The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs
Author: Zhang, Yanwen
Ding, E-Jiang
Zhang, Tonghe
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 152 (1999) nr. 2-3 pages 307-313
Year: 1999
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 28 of 29 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands