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Journal description
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Details for article 36 of 95 found articles
| Title: |
Impact of high energy ion implantation on dopant distribution in silicon |
| Author: |
Neustroev, E.P Antonova, I.V Obodnikov, V.I Popov, V.P Skuratov, V.A Smagulova, S.A Didyk, A.Yu |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 146 (1998) nr. 1-4 pages 6 p. |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Elsevier Science B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 36 of 95 found articles
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