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Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs |
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Titel: |
Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs |
Auteur: |
Rogalla, M. Battke, M. Duda, N. Geppert, R. Göppert, R. Irsigler, R. Ludwig, J. Runge, K. Schmid, Th. Joerger, W. Benz, K.W. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 134 (1998) nr. 1 pagina's 8 p. |
Jaar: |
1998 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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