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                                       Details for article 34 of 68 found articles
 
 
  Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study
 
 
Title: Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study
Author: Palard, M.
Ruault, M.O.
Kaïtasov, O.
Bernas, H.
Heinig, K.H.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 120 (1996) nr. 1-4 pages 4 p.
Year: 1996
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 34 of 68 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands