Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 74 of 137 found articles
 
 
  1 keV hydrogen implantation in a-Si and c-Si: Physical vs computational modeling
 
 
Title: 1 keV hydrogen implantation in a-Si and c-Si: Physical vs computational modeling
Author: Bourque, Gilles
Terreault, Bernard
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 115 (1996) nr. 1-4 pages 5 p.
Year: 1996
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 74 of 137 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands