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                                       Details for article 7 of 33 found articles
 
 
  Backscattering analysis of Si1−y C y layers using the 12C(4He,4He) 12C resonance at 4.265 MeV
 
 
Title: Backscattering analysis of Si1−y C y layers using the 12C(4He,4He) 12C resonance at 4.265 MeV
Author: Endisch, D.
Osten, H.J.
Zaumseil, P.
Zinke-Allmang, M.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 100 (1995) nr. 1 pages 8 p.
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 7 of 33 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands