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                                       Details for article 92 of 138 found articles
 
 
  MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
 
 
Title: MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
Author: Poggi, A.
Moscatelli, F.
Hijikata, Y.
Solmi, S.
Nipoti, R.
Appeared in: Microelectronic engineering
Paging: Volume 84 (2007) nr. 12 pages 6 p.
Year: 2007
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 92 of 138 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands