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                                       Details for article 69 of 138 found articles
 
 
  Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
 
 
Title: Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
Author: Kuo, Chien-I
Hsu, Heng-Tung
Wu, Chien-Ying
Chang, Edward Y.
Chen, Yu-Lin
Lim, Wee-Chin
Appeared in: Microelectronic engineering
Paging: Volume 87 (2010) nr. 12 pages 4 p.
Year: 2010
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 69 of 138 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands