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Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface |
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Titel: |
Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface |
Auteur: |
Tsutsui, Kazuo Shiozawa, Takashi Nagahiro, Koji Ohishi, Yoshihisa Kakushima, Kuniyuki Ahmet, Parhat Urushihara, Nobuyuki Suzuki, Mineharu Iwai, Hiroshi |
Verschenen in: |
Microelectronic engineering |
Paginering: |
Jaargang 85 (2008) nr. 10 pagina's 5 p. |
Jaar: |
2008 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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