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Details for article 18 of 58 found articles
| Title: |
Effects of annealing conditions and thickness ratio of Si/Al films on the Hall carrier mobility, Al carrier concentration, and nanovoids formed in the metal-induced Si crystallization of Si/Al/Si/SiO2/glass specimens |
| Author: |
Peng, Cheng Chang Chung, Chen Kuei Wu, Bo Hsiung Weng, Min Hang Huang, Chil Chieh Lin, Jen Fin |
| Appeared in: |
Surface & coatings technology |
| Paging: | Volume 205 (2011) nr. 19 pages 11 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 58 found articles
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