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                                       Details for article 20 of 111 found articles
 
 
  Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications
 
 
Title: Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications
Author: Suk Yang, Won
Kwan Kim, Yeong
Yang, Seung-Yeal
Hwak Choi, Jin
Soo Park, Heung
In Lee, Sang
Yoo, Ji-Beom
Appeared in: Surface & coatings technology
Paging: Volume 131 (2000) nr. 1-3 pages 5 p.
Year: 2000
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 20 of 111 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands