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Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2T x framework |
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Title: |
Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2T x framework |
Author: |
Zhang, Tianyu Hong, Yang Li, Jingyang Li, Yang Zhao, Huiyang Cui, Kai Wei, Wenjing Kang, Hongjun Wu, Jinzhu Qin, Wei Wu, Xiaohong |
Appeared in: |
Composites science and technology |
Paging: |
Volume 258 () nr. C pages p. |
Year: |
2024 |
Contents: |
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Publisher: |
Elsevier Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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