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                                       Details for article 54 of 66 found articles
 
 
  Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2T x framework
 
 
Title: Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2T x framework
Author: Zhang, Tianyu
Hong, Yang
Li, Jingyang
Li, Yang
Zhao, Huiyang
Cui, Kai
Wei, Wenjing
Kang, Hongjun
Wu, Jinzhu
Qin, Wei
Wu, Xiaohong
Appeared in: Composites science and technology
Paging: Volume 258 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 54 of 66 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands