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Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device |
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Titel: |
Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device |
Auteur: |
Wang, Xiaojun Sun, Bai Li, Xiaoxia Guo, Bolin Zeng, Yushuang Mao, Shuangsuo Zhu, Shouhui Xia, Yudong Tian, Shu Luo, Weiting |
Verschenen in: |
Ceramics international |
Paginering: |
Jaargang 44 () nr. 15 pagina's 18108-18112 |
Jaar: |
2018 |
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Uitgever: |
Elsevier Ltd and Techna Group S.r.l. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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