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                                       Details for article 2 of 16 found articles
 
 
  Defect structure of In x Ga1−x As/GaAs grown on misoriented (100) silicon by molecular beam epitaxy
 
 
Title: Defect structure of In x Ga1−x As/GaAs grown on misoriented (100) silicon by molecular beam epitaxy
Author: Christou, A.
Flevaris, N.
Georgakilas, A.
Iliadis, A.A.
Appeared in: Materials letters
Paging: Volume 8 (1989) nr. 3-4 pages 3 p.
Year: 1989
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 16 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands