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                                       Details for article 32 of 77 found articles
 
 
  Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
 
 
Title: Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
Author: Lee, S.Y.
Choi, K.H.
Kang, H.C.
Appeared in: Materials letters
Paging: Volume 176 (2016) nr. C pages 6 p.
Year: 2016
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 32 of 77 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands