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  Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates
 
 
Title: Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates
Author: Wang, Wenliang
Liu, Zuolian
Yang, Weijia
Lin, Yunhao
Zhou, Shizhong
Qian, Huirong
Li, Guoqiang
Appeared in: Materials letters
Paging: Volume 128 (2014) nr. C pages 4 p.
Year: 2014
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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