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                                       Details for article 28 of 67 found articles
 
 
  Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
 
 
Title: Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Author: Wang, G.
Loo, R.
Takeuchi, S.
Souriau, L.
Lin, J.C.
Moussa, A.
Bender, H.
De Jaeger, B.
Ong, P.
Lee, W.
Meuris, M.
Caymax, M.
Vandervorst, W.
Blanpain, B.
Heyns, M.M.
Appeared in: Thin solid films
Paging: Volume 518 (2010) nr. 9 pages 4 p.
Year: 2010
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 28 of 67 found articles
 
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