Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Title:
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Author:
Wang, G. Loo, R. Takeuchi, S. Souriau, L. Lin, J.C. Moussa, A. Bender, H. De Jaeger, B. Ong, P. Lee, W. Meuris, M. Caymax, M. Vandervorst, W. Blanpain, B. Heyns, M.M.