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                                       Details for article 6 of 18 found articles
 
 
  A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism
 
 
Title: A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism
Author: Li, Linan
Ba, Wenqiang
Wang, Wei
Li, Ling
Xu, Guangwei
Wang, Lingfei
Ji, Zhuoyu
Lu, Congyan
Banerjee, Writam
Appeared in: Microelectronics journal
Paging: Volume 86 () nr. C pages 1-6
Year: 2019
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 18 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands