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                                       Details for article 2 of 12 found articles
 
 
  A 20nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process–voltage–temperature variations
 
 
Title: A 20nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process–voltage–temperature variations
Author: Kushwah, C.B.
Vishvakarma, S.K.
Dwivedi, D.
Appeared in: Microelectronics journal
Paging: Volume 51 () nr. C pages 75-88
Year: 2016
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 12 found articles
 
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