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Journal description
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Details for article 25 of 55 found articles
| Title: |
Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling |
| Author: |
Touré, A. Halidou, I. Benzarti, Z. Boufaden, T. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 40 () nr. 2 pages 363-366 |
| Year: |
2009 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 25 of 55 found articles
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