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                                       Details for article 6 of 19 found articles
 
 
  Changes of electrical properties by Al content of Al x Ga1− x As in pHEMT structures as observed using HRXRD
 
 
Title: Changes of electrical properties by Al content of Al x Ga1− x As in pHEMT structures as observed using HRXRD
Author: Soetedjo, Hariyadi
Ezrol Esham, S.
Sabtu, Idris
Mohd Razman, Y.
Abdul Fatah, A.M.
Appeared in: Microelectronics journal
Paging: Volume 37 (2006) nr. 10 pages 4 p.
Year: 2006
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 19 found articles
 
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