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Journal description
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Details for article 12 of 16 found articles
| Title: |
Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET |
| Author: |
Rong, Yang Jinsheng, Luo Jing, Tu Ruizhi, Zhang |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 35 () nr. 2 pages 145-149 |
| Year: |
2004 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 16 found articles
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