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Journal description
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Details for article 11 of 25 found articles
| Title: |
Linearly varying surface-implanted n− layer used for improving trade-off between breakdown voltage and on-resistance of RESURF LDMOS transistor |
| Author: |
He, Jin Zhang, Xing Yuan Wang, Yang |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 32 () nr. 12 pages 969-971 |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 25 found articles
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