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                                       Details for article 14 of 22 found articles
 
 
  Numerical analysis of SOI LDMOS using a recessed source and a trench drain
 
 
Title: Numerical analysis of SOI LDMOS using a recessed source and a trench drain
Author: Yoo, S.-J
Kim, S.-H
Choi, Y.-I
Chung, S.-K
Appeared in: Microelectronics journal
Paging: Volume 31 () nr. 11-12 pages 963-967
Year: 2000
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 14 of 22 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands