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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 7 of 16 found articles
| Title: |
Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor |
| Author: |
Flores, D Godignon, P Jordà, X Vellvehi, M Fernández, J Millán, J |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 30 () nr. 6 pages 591-597 |
| Year: |
1999 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 7 of 16 found articles
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