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Journal description
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Details for article 11 of 20 found articles
| Title: |
Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy |
| Author: |
Yoon, S.F. Gay, B.P. Zheng, H.Q. Ang, K.S. Wang, H. Ng, G.I. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 30 () nr. 1 pages 23-28 |
| Year: |
1999 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 20 found articles
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