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Journal description
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Details for article 21 of 27 found articles
| Title: |
New model of gate-induced drain current density in an NMOS transistor |
| Author: |
Bouhdada, A. Touhami, A. Bakkali, S. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 29 () nr. 11 pages 813-816 |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 21 of 27 found articles
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