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Journal description
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Details for article 21 of 33 found articles
| Title: |
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors |
| Author: |
Mouis, M. Gregory, H.J. Denorme, S. Mathiot, D. Ashburn, P. Robbins, D.J. Glasper, J.L. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 26 () nr. 2-3 pages 255-259 |
| Year: |
1995 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 21 of 33 found articles
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