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                                       Details for article 17 of 23 found articles
 
 
  Physical properties of III–V semiconductor compounds, InP, InAs, GaAs, GaP, InGaAs and InGaAsP
 
 
Title: Physical properties of III–V semiconductor compounds, InP, InAs, GaAs, GaP, InGaAs and InGaAsP
Author: Morant, M.J.
Appeared in: Microelectronics journal
Paging: Volume 25 () nr. 3 pages 252
Year: 1994
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 17 of 23 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands