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Journal description
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Details for article 9 of 24 found articles
| Title: |
Models for the Si–SiO2 interface degradation at low injected electron fluences |
| Author: |
Mir, A. Vuillaume, D. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 24 () nr. 4 pages 361-369 |
| Year: |
1993 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 9 of 24 found articles
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