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                                       Details for article 12 of 14 found articles
 
 
  The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator
 
 
Title: The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator
Author: Dutta, Pradip K.
Cristoloveanu, Sorin
Appeared in: Microelectronics journal
Paging: Volume 22 () nr. 7-8 pages 67-76
Year: 1991
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 14 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands